Polar TM HiperFET TM
Power MOSFET
N-Channel Enhancement Mode
IXFH170N10P
IXFK170N10P
V DSS
I D25
R DS(on)
t rr
= 100V
= 170A
≤ 9m Ω
≤ 150ns
Avalanche Rated
Fast Intrinsic Rectifier
TO-247 (IXFH)
Symbol
V DSS
V DGR
Test Conditions
T J = 25°C to 175°C
T J = 25°C to 175°C, R GS = 1M Ω
Maximum Ratings
100
100
V
V
G
D
S
Tab
V GSS
V GSM
I D25
I L(RMS)
I DM
Continuous
Transient
T C = 25°C
External Lead Current Limit
T C = 25°C, Pulse Width Limited by T JM
± 20
± 30
170
160
350
V
V
A
A
A
TO-264 (IXFK)
I A
E AS
T C = 25°C
T C = 25°C
60
2
A
J
G
D
S
Tab
dv/dt
P D
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 175°C
T C = 25°C
10
715
V/ns
W
G = Gate
S = Source
D = Drain
Tab = Drain
T J
T JM
-55 to +175
+175
°C
°C
T stg
-55 to +175
°C
Features
T L
1.6mm (0.063in) from Case for 10s
300
°C
T SOLD
M d
Weight
Plastic Body for 10s
Mounting Torque
TO-247
TO-264
260
1.13/10
6
10
°C
Nm/lb.in.
g
g
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low R DS(ON) and Q G
Low Package Inductance
Advantages
Symbol Test Conditions
(T J = 25°C, Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 250 μ A
V GS(th) V DS = V GS , I D = 4mA
Characteristic Values
Min. Typ. Max.
100
2.5 5.0
V
V
High Power Density
Easy to Mount
Space Savings
I GSS
I DSS
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
±100 nA
25 μ A
Applications
R DS(on)
T J = 150°C
V GS = 10V, I D = 0.5 ? I D25 , Note 1
V GS = 15V, I D = 350A
7
500 μ A
9 m Ω
m Ω
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
? 2010 IXYS CORPORATION, All Rights Reserved
DS99380F(01/10)
相关PDF资料
IXFK170N10 MOSFET N-CH 100V 170A TO-264AA
IXFK180N085 MOSFET N-CH 85V 180A TO-264AA
IXFK180N10 MOSFET N-CH 100V 180A TO-264AA
IXFK180N15P MOSFET N-CH 150V 180A TO-264
IXFK20N120P MOSFET N-CH 1200V 20A TO-264
IXFK20N120 MOSFET N-CH 1200V 20A TO-264
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IXFK220N15P MOSFET N-CH 150V 220A TO-264
相关代理商/技术参数
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IXFK180N10_09 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiperFET Power MOSFETs
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